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plasma ashing

См. также в других словарях:

  • Plasma ashing — In semiconductor manufacturing plasma ashing is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive… …   Wikipedia

  • plasma ashing of photoresist — plazmocheminis fotorezisto šalinimas statusas T sritis radioelektronika atitikmenys: angl. plasma ashing of photoresist vok. plasmachemische Fotoresistablösung, f rus. плазмохимическое удаление фоторезиста, n pranc. élimination plasmachimique du… …   Radioelektronikos terminų žodynas

  • Ashing — AshingDepending on context, this may refer to plasma ashing, which is used in semiconductor manufacturing and MEMS for removing photoresist, or it may refer to the process below:A test to deduce the amount of ash forming material present in a… …   Wikipedia

  • Plasma (physics) — For other uses, see Plasma. Plasma lamp, illustrating some of the more complex phenomena of a plasma, including filamentation. The colors are a result of relaxation of electrons in excited states to lower energy states after they have recombined… …   Wikipedia

  • Inductively Coupled Plasma Emission Spectrometry — Inductively Coupled Plasma Emission SpectrometryA test method of quantitative identification of the elements, Aluminium, Silicon, Sodium, Vanadium, Nickel, Iron, Calcium, Zinc and Phosphorus in residual fuel oils.A weighted test sample is… …   Wikipedia

  • Inductively coupled plasma atomic emission spectroscopy — (ICP AES), also referred to as inductively coupled plasma optical emission spectrometry (ICP OES), is an analytical technique used for the detection of trace metals. It is a type of emission spectroscopy that uses the inductively coupled plasma… …   Wikipedia

  • Gravure (micro-fabrication) — La gravure (aussi appelée parfois par son nom anglophone, etching) est un procédé utilisée en micro fabrication, qui consiste à retirer une ou plusieurs couches de matériaux à la surface d un wafer. La gravure est une étape critique, extrêmement… …   Wikipédia en Français

  • Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 …   Wikipedia

  • Dry etching — refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes… …   Wikipedia

  • Fluor — Oxygène ← Fluor → Néon …   Wikipédia en Français

  • Ash — may refer to:Products of fire, incineration or combustion* The solid remains of a fire * Incinerator bottom ash, a form of ash produced in incineration facilities * Volcanic ash, material ejected from a volcano * Ash (analytical chemistry), the… …   Wikipedia

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